{"title":"一个12b 200MS/s SAR ADC中的低功率参考电压缓冲器和高密度单元电容器","authors":"Wenbin He, Ziwei Li, Fan Ye, Junyan Ren","doi":"10.1109/APCCAS50809.2020.9301670","DOIUrl":null,"url":null,"abstract":"This paper introduces a low power reference voltage buffer(RVB) and a MIM-MOM combinational unit capacitor for high speed ADC. The proposed RVB adopts flipped voltage follower(FVF) technique achieving lower output impedance to reduce power consumption and a normal supply voltage can be used. The unit capacitor is a full surrounded structure, in which the top plate is enwrapped by the bottom plate to reduce the parasite capacitance on it. High density and good matching can be achieved. The concept is applied to a 12b 200MS/s SAR ADC with recombination redundancy scheme in 28 nm CMOS. The ADC and RVB consume 1.88mW and 2.4mW, respectively. The simulation shows that the SNDR and SFDR are 64.79dB and 76.71dB with a 95.3MHz input.","PeriodicalId":127075,"journal":{"name":"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Low Power Reference Voltage Buffer and High Density Unit capacitor in a 12b 200MS/s SAR ADC\",\"authors\":\"Wenbin He, Ziwei Li, Fan Ye, Junyan Ren\",\"doi\":\"10.1109/APCCAS50809.2020.9301670\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces a low power reference voltage buffer(RVB) and a MIM-MOM combinational unit capacitor for high speed ADC. The proposed RVB adopts flipped voltage follower(FVF) technique achieving lower output impedance to reduce power consumption and a normal supply voltage can be used. The unit capacitor is a full surrounded structure, in which the top plate is enwrapped by the bottom plate to reduce the parasite capacitance on it. High density and good matching can be achieved. The concept is applied to a 12b 200MS/s SAR ADC with recombination redundancy scheme in 28 nm CMOS. The ADC and RVB consume 1.88mW and 2.4mW, respectively. The simulation shows that the SNDR and SFDR are 64.79dB and 76.71dB with a 95.3MHz input.\",\"PeriodicalId\":127075,\"journal\":{\"name\":\"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"volume\":\"189 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS50809.2020.9301670\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS50809.2020.9301670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
介绍了一种用于高速ADC的低功率参考电压缓冲器(RVB)和一种mimm - mom组合单元电容器。该RVB采用了翻转电压从动器(FVF)技术,实现了较低的输出阻抗,降低了功耗,并且可以使用正常的电源电压。单位电容器为全包围式结构,其顶板被底板包裹,以减少其上的寄生电容。可以实现高密度和良好的匹配。该概念应用于28纳米CMOS中具有重组冗余方案的12b 200MS/s SAR ADC。ADC和RVB的功耗分别为1.88mW和2.4mW。仿真结果表明,在95.3MHz输入时,SNDR和SFDR分别为64.79dB和76.71dB。
A Low Power Reference Voltage Buffer and High Density Unit capacitor in a 12b 200MS/s SAR ADC
This paper introduces a low power reference voltage buffer(RVB) and a MIM-MOM combinational unit capacitor for high speed ADC. The proposed RVB adopts flipped voltage follower(FVF) technique achieving lower output impedance to reduce power consumption and a normal supply voltage can be used. The unit capacitor is a full surrounded structure, in which the top plate is enwrapped by the bottom plate to reduce the parasite capacitance on it. High density and good matching can be achieved. The concept is applied to a 12b 200MS/s SAR ADC with recombination redundancy scheme in 28 nm CMOS. The ADC and RVB consume 1.88mW and 2.4mW, respectively. The simulation shows that the SNDR and SFDR are 64.79dB and 76.71dB with a 95.3MHz input.