FeS2薄膜太阳能电池器件结构的数值模拟

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543671

S. Uchiyama, Y. Ishikawa, Y. Kawamura, Y. Uraoka

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引用次数: 3

摘要

本文通过器件仿真对FeS2薄膜太阳能电池进行了器件建模，从器件结构上探讨了0%转换效率的原因。我们证明了所报道的器件没有形成一个合适的光伏器件结构。为了实现FeS2光伏器件，我们建议不仅要获得合适的能带结构，而且要获得合适的FeS2带隙。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Numerical modeling of device structure for FeS2 thin film solar cells

This paper describes device modeling of FeS2 thin-film solar cells by device simulation to investigate the cause of 0% conversion efficiency from the reported device structure. We demonstrated that the reported device didn't form a suitable structure as a photovoltaic device. In order to achieve FeS2 photovoltaic device, we suggested that obtaining not only suitable band structure but also suitable band gap of FeS2 was necessary.

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来源期刊

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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