用于高带宽应用的大型2.5D玻璃中间体的设计和演示

T. Sakai, Brett M. D. Sawyer, Hao Lu, Y. Takagi, R. Furuya, Yuya Suzuki, M. Kobayashi, V. Smet, V. Sundaram, R. Tummala
{"title":"用于高带宽应用的大型2.5D玻璃中间体的设计和演示","authors":"T. Sakai, Brett M. D. Sawyer, Hao Lu, Y. Takagi, R. Furuya, Yuya Suzuki, M. Kobayashi, V. Smet, V. Sundaram, R. Tummala","doi":"10.1109/ICSJ.2014.7009629","DOIUrl":null,"url":null,"abstract":"In this paper, a large 2.5D glass interposer is demonstrated with 50 um chip-level interconnect (FLI), 3/3 um line and space (L/S) escape routing, and six metal layers, which are targeted for JEDEC high bandwidth memory (HBM). Our routing design suggests that double sided panel processing with 3/3 um L/S can accommodate required signal lines for HBM. Then, 3/3 um L/S transmission lines on 25mm × 30mm glass interposers with 300 um core thickness can be realized by utilizing semi additive process. Finally, 10mm × 10m dies with daisy chains can be successfully bonded to 25mm × 30mm glass interposer with 6 metal lines using copper microbumps with SnAg solder caps.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Design and demonstration of large 2.5D glass interposer for high bandwidth applications\",\"authors\":\"T. Sakai, Brett M. D. Sawyer, Hao Lu, Y. Takagi, R. Furuya, Yuya Suzuki, M. Kobayashi, V. Smet, V. Sundaram, R. Tummala\",\"doi\":\"10.1109/ICSJ.2014.7009629\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a large 2.5D glass interposer is demonstrated with 50 um chip-level interconnect (FLI), 3/3 um line and space (L/S) escape routing, and six metal layers, which are targeted for JEDEC high bandwidth memory (HBM). Our routing design suggests that double sided panel processing with 3/3 um L/S can accommodate required signal lines for HBM. Then, 3/3 um L/S transmission lines on 25mm × 30mm glass interposers with 300 um core thickness can be realized by utilizing semi additive process. Finally, 10mm × 10m dies with daisy chains can be successfully bonded to 25mm × 30mm glass interposer with 6 metal lines using copper microbumps with SnAg solder caps.\",\"PeriodicalId\":362502,\"journal\":{\"name\":\"IEEE CPMT Symposium Japan 2014\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE CPMT Symposium Japan 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSJ.2014.7009629\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE CPMT Symposium Japan 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSJ.2014.7009629","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

本文展示了一种大型2.5D玻璃中间层,具有50um芯片级互连(FLI), 3/ 3um线路和空间(L/S)逃逸路由,以及针对JEDEC高带宽存储器(HBM)的六层金属层。我们的布线设计表明,3/3 μ m L/S的双面面板加工可以容纳HBM所需的信号线。然后利用半增材工艺在芯厚为300 um的25mm × 30mm玻璃中间层上实现3/ 3um L/S传输线。最后,采用带有SnAg焊锡帽的铜微凸点,将带有菊花链的10mm × 10m模具成功粘合到带有6条金属线的25mm × 30mm玻璃中间层上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and demonstration of large 2.5D glass interposer for high bandwidth applications
In this paper, a large 2.5D glass interposer is demonstrated with 50 um chip-level interconnect (FLI), 3/3 um line and space (L/S) escape routing, and six metal layers, which are targeted for JEDEC high bandwidth memory (HBM). Our routing design suggests that double sided panel processing with 3/3 um L/S can accommodate required signal lines for HBM. Then, 3/3 um L/S transmission lines on 25mm × 30mm glass interposers with 300 um core thickness can be realized by utilizing semi additive process. Finally, 10mm × 10m dies with daisy chains can be successfully bonded to 25mm × 30mm glass interposer with 6 metal lines using copper microbumps with SnAg solder caps.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信