真空场与光电器件复合纳米结构的隧道过程模型

2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE) Pub Date : 2018-09-01 DOI:10.1109/APEDE.2018.8542451

G. Akchurin, Y. Avetisyan, N. Aban'shin, A. Yakunin

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引用次数: 0

摘要

建立了电子从复合纳米结构(钼基上类金刚石碳的介电膜)隧穿到真空中的现象学模型。在假定注入-漂移-发射电流密度连续的前提下，考虑了金属-介电-真空结构的三种场发射机制。计算得到的电流特性与实验研究的结果有定性的对应关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Model of Tunneling Processes in Composite Nanostructures for Vacuum Field- and Photoemission Devices

A phenomenological model of tunneling of electrons into vacuum from a composite nanostructure - a dielectric film of diamond-like carbon on a molybdenum base - is constructed. Three mechanisms of field emission from the metal-dielectric-vacuum structure are taken into account, assuming continuity of the injection-drift-emission current density. A qualitative correspondence of the character of calculated current characteristics to the result of an experimental study is obtained.

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2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)

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