Simulation of Quantum Transport in Ballistic Double-Gate MOSFETs using Transfer Matrix Method

Numerical simulation of nanoscale double gate MOSFET depends mainly on the accurate representation of quantum-mechanical effects. These effects include, mainly, the quantum confinement of carriers by gate-oxides in the direction normal to the interfaces, and the quantum transport of carriers along the channel. In a previous work, the use of transfer matrix method (TMM) was proposed for the simulation of the first effect. In this work, TMM is proposed to be used for the solution of Schrodinger equation with open boundary conditions to simulate the second quantum-mechanical effect. Transport properties such as transmission probability, carrier concentration, and I-V characteristics resulting from quantum transport simulation using TMM are compared with that using the traditional tight-binding model (TBM). Comparison showed that, when the same mesh size is used in both methods, TMM gives more accurate results than TBM