采用晶圆级CSP技术制造的新型对称高Q电感

Y. Aoki, S. Shimizu, K. Honjo
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引用次数: 2

摘要

晶圆级晶片尺寸封装(WLP)技术可以制造低损耗高q电感器,这种电感器受到不利的双端口不对称特性的影响。为了克服这一问题,提出了一种新型的钳型电感器,将多匝电感结构中的电极交叉点从传统的镜像对称点修改为新的电对称点。采用WPL技术设计和制作了新型夹片电感器。通过开发的新型4-nH夹式电感器,在1.4 GHz时,两个端口之间的q因子值差可以从14.8%显著降低到1.4%。本文还对所研制的电感器在传统短路负载和阻抗匹配条件下的q因子进行了评估。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel symmetric high Q inductors fabricated using wafer-level CSP technology
Wafer level chip-size package (WLP) technology enables fabrications of low-loss high-Q inductors, which suffer from unfavorable two-port asymmetric characteristics. To overcome this problem, a novel clip-type inductor has been proposed, where the electrode crossover points in multi-turn inductor structures is modified from a conventional mirror symmetric point to a novel electrical symmetric point. The novel clip inductors were designed and fabricated using WPL technology. By means of a developed 4-nH novel clip inductor, the Q-factor value difference between the two ports can be significantly reduced to 1.4% from 14.8% at 1.4 GHz. Q-factors of developed inductors have also been evaluated under both a conventional short-circuited load condition and an impedance matched condition.
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