一种并联增益提升结构的高性能CMOS连续时间电流比较器电路设计

Jie Fan, Ju Tang, G. Yan, Yacong Zhang, L. Ji
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引用次数: 2

摘要

本文提出了一种基于CSMC 0.5μm标准CMOS工艺,采用增益升压结构并联的新型高精度高速电流比较器。电路采用两个放大器,充分利用开环增益,提高了比较精度。仿真结果表明,该方法可获得优于0.01μA的高分辨率。对放大器开环增益倒退、电源电压按比例减小和基准电流变化情况进行了比较。详细讨论了其平均功耗和传输时延。在电源电压为2V时,当电流差为±0.1μA时,响应延迟小于16ns,采用0.18μm标准CMOS工艺可进一步提高响应延迟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Circuit Design of a High Performance CMOS Continuous-time Current Comparator with Gain Boosting Structures in Parallel
In this paper, a novel high-accuracy and high-speed current comparator using gain boosting structures in parallel is proposed based on CSMC 0.5μm standard CMOS process. Two amplifiers are employed in the circuit whose open-loop gain has been fully used to improve the comparing accuracy. Simulation results reveal that a high resolution better than 0.01μA can be easily obtained by this approach. Some comparisons were made when amplifier open -loop gain retrogressed, power supply voltage scaled down or reference current varied. Detailed discussions about its average power dissipation and propagation delay are presented. The response delay is less than 16ns for ±0.1μA current difference at the supply voltage of 2V, which is expected to be further improved with 0.18μm standard CMOS process.
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