O. Ceylan, A. Işik, Yi Zhu, S. Pires
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引用次数: 2

摘要

在本研究中,提出了在大功率棒的输入和输出处适当的谐波终端对封装的高功率射频器件效率的贡献。所设计的网络具有低通滤波器特性,包括特定的二次谐波终端,并实现在陶瓷封装中。电源棒由总栅极宽度为16mm的GaN hemt组成,工艺技术为0.45 $\mu$m。测量结果表明,在输入和输出处适当的谐波端接可使DE提高18%。在2.9 GHz下,峰值漏极效率达到80.5%,峰值输出功率达到52 dBm。2.7 ~ 3.1 GHz频段漏极效率高于76%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental Analysis of In-package Harmonic Manipulations with a 160 W GaN HEMT Power Bar
In this study, contributions of the proper harmonic terminations at the input and output of large power bars to efficiency of the packaged high power RF devices are presented. The designed networks have low-pass filter characteristic including specific terminations for 2nd harmonics and are implemented into ceramic packages. The power bars consist of 16 mm total gate width GaN HEMTs of 0.45 $\mu$m process technology. The measured results show that proper terminations of the harmonics at the input and output provide 18 % DE improvement. 80.5 % peak drain efficiency and 52 dBm peak output power were achieved at 2.9 GHz. Drain efficiency was higher than 76 % in 2.7-3.1 GHz band.
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