1W双极部分的半频不稳定性

Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573) Pub Date : 2002-11-07 DOI:10.1109/RAWCON.2002.1030144

A. Aimdilokwong, R. Weber

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引用次数: 0

摘要

研究了1W双极器件的半频不稳定性。当双极部分工作在1ghz时，小信号散射参数在500mhz下测量。测量完成在各种驱动水平，从线性到饱和区域的操作。使用一种算法来计算500 MHz时的小信号s参数，而不必向设备提供50欧姆的终端，而是在1 GHz时的最佳负载。这是很重要的，因为微波功率晶体管需要一个合适的负载终端(不是50欧姆终端)，以便在大信号电平下工作。

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Half frequency instability on a 1W bipolar part

Half frequency instability is investigated on a 1W bipolar part. The small signal scattering parameters are measured at 500 MHz while the bipolar part is operating at 1 GHz. The measurement is done over various drive levels ranging from linear to saturation regions of operation. An algorithm is used to calculate the small signal S-parameters at 500 MHz without having to present 50-ohm termination to the device but instead the optimum load at 1 GHz. This is significant because the microwave power transistor needs a suitable load termination (not a 50-ohm termination) in order to operate at that large signal level.

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来源期刊

Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573)

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