用SRAM环形振荡器测量三维技术中硅通孔(tsv)对性能的影响

2013 Proceedings of the ESSCIRC (ESSCIRC) Pub Date : 2013-10-31 DOI:10.1109/ESSCIRC.2013.6649162

J. B. Kuang, K. Jenkins, K. Stawiasz, J. Schaub

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引用次数: 0

摘要

描述了一种用于局部、原位探测器件性能的紧凑SRAM环形振荡器电路。该电路应用于三维集成电路技术(3DI)，用于确定当电池靠近硅通孔(tsv)时，是否对SRAM性能有任何影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance impact of through-silicon vias (TSVs) in three-dimensional technology measured by SRAM ring oscillators

A compact SRAM ring oscillator circuit for local, in-situ, probing of device performance is described. Applied to three-dimensional integrated circuit technology (3DI), the circuit is used to determine if there is any effect on SRAM performance when the cells are placed in close proximity to through-silicon vias (TSVs).

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2013 Proceedings of the ESSCIRC (ESSCIRC)

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