SiC MOSFET牵引逆变器对紧凑型电动车续航里程的影响

Kundan Kumar, M. Bertoluzzo, G. Buja
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引用次数: 28

摘要

基于宽带隙(WBG)半导体材料的功率器件的出现,如碳化硅(SiC) mosfet,可以通过降低转换损耗和实现更高开关频率的工作来提高功率转换器系统的整体性能。本文分析了牵引逆变器采用碳化硅器件对电动汽车增程的影响。作为案例研究,考虑了配备硅(Si) IGBT牵引逆变器的紧凑型电动汽车。在引入用于评估续航里程的驱动循环后,计算了逆变器对牵引电机施加的电流和电压沿驱动循环的时间图。然后制定了Si和SiC器件的损耗模型,并找到了Si IGBT逆变器在驱动周期内的损耗,并将其与SiC MOSFET逆变器的损耗进行了比较。对于案例研究,分析表明,SiC MOSFET逆变器可以将电动汽车的范围延长5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of SiC MOSFET traction inverters on compact-class electric car range
The advent of power devices based on Wide Band Gap (WBG) semiconductor materials, like the Silicon Carbide (SiC) MOSFETs, can improve the overall performance of the power converter systems, by reducing the conversion losses and enabling operation at higher switching frequency. This paper analyzes the range extension of electric vehicles (EVs) ensuing from the adoption of SiC devices for the traction inverter. As a case study, a compact-class electric car equipped with a Silicon (Si) IGBT traction inverter is considered. After introducing the driving cycle used to evaluate the range, the time graphs of currents and voltages applied by the inverter to the traction motor along the driving cycle are calculated. A loss model for Si and SiC devices is then formulated, and the losses of the Si IGBT inverter over the driving cycle are found and compared to the losses obtainable with a SiC MOSFET inverter. For the case study, the analysis shows that a SiC MOSFET inverter can extend the electric car range up to 5%.
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