碲化汞镉的光致发光——历史回顾。第二部分:2004-2022

M. Ruzhevich, K. Mynbaev
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引用次数: 0

摘要

本文是对红外光电子领域最重要的材料之一碲化汞镉(HgCdTe)的光致发光研究进行历史回顾的第二部分。审查的第二部分考虑了2004-2022年进行的研究的结果。这些研究主要是在分子束外延生长的薄膜上进行的,重点是对缺陷的研究,特别是那些由汞空位或砷原子掺杂的p型掺杂引起的缺陷。HgCdTe的成分均匀性和合金波动也是研究的主题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022
This review is a second part of the work that presents a historical retrospective of the studies of photoluminescence in mercury cadmium telluride (HgCdTe), one of the most important materials of infrared photo-electronics. The second part of the review considers the results of the studies performed in 2004–2022. These studies were carried out mostly on films grown by molecular beam epitaxy and focused on the investigation of defects, especially those originating in p-type doping with mercury vacancies or arsenic atoms. Compositional uniformity and alloy fluctuations in HgCdTe were also the subjects of the studies.
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