基于忆阻交叉棒的可编程互连

Raqibul Hasan, T. Taha
{"title":"基于忆阻交叉棒的可编程互连","authors":"Raqibul Hasan, T. Taha","doi":"10.1109/ISVLSI.2014.100","DOIUrl":null,"url":null,"abstract":"The memristor is a novel non-volatile device having a large variable resistance range. Physical memristors can be laid out in a high density grid known as a crossbar. In this paper we propose a memristor crossbar based static routing switch design. We logically connect two wires within a crossbar by setting their corresponding cross-point memristor to a low resistance state. Conversely we logically disconnect the wires by setting the corresponding memristor to a high resistance state. Our evaluations show that the proposed static switch consumes extremely low power and has a high density compared to existing designs.","PeriodicalId":405755,"journal":{"name":"2014 IEEE Computer Society Annual Symposium on VLSI","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Memristor Crossbar Based Programmable Interconnects\",\"authors\":\"Raqibul Hasan, T. Taha\",\"doi\":\"10.1109/ISVLSI.2014.100\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The memristor is a novel non-volatile device having a large variable resistance range. Physical memristors can be laid out in a high density grid known as a crossbar. In this paper we propose a memristor crossbar based static routing switch design. We logically connect two wires within a crossbar by setting their corresponding cross-point memristor to a low resistance state. Conversely we logically disconnect the wires by setting the corresponding memristor to a high resistance state. Our evaluations show that the proposed static switch consumes extremely low power and has a high density compared to existing designs.\",\"PeriodicalId\":405755,\"journal\":{\"name\":\"2014 IEEE Computer Society Annual Symposium on VLSI\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Computer Society Annual Symposium on VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISVLSI.2014.100\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Computer Society Annual Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2014.100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

忆阻器是一种具有大可变电阻范围的新型非易失性器件。物理忆阻器可以被布置成高密度的栅格,称为交叉栅。本文提出了一种基于忆阻交叉棒的静态路由开关设计。我们通过将其相应的交叉点忆阻器设置为低阻状态来逻辑地连接横杆内的两根导线。相反,我们通过将相应的忆阻器设置为高阻状态,在逻辑上断开电线。我们的评估表明,与现有设计相比,所提出的静态开关功耗极低,密度高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Memristor Crossbar Based Programmable Interconnects
The memristor is a novel non-volatile device having a large variable resistance range. Physical memristors can be laid out in a high density grid known as a crossbar. In this paper we propose a memristor crossbar based static routing switch design. We logically connect two wires within a crossbar by setting their corresponding cross-point memristor to a low resistance state. Conversely we logically disconnect the wires by setting the corresponding memristor to a high resistance state. Our evaluations show that the proposed static switch consumes extremely low power and has a high density compared to existing designs.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信