{"title":"基于忆阻交叉棒的可编程互连","authors":"Raqibul Hasan, T. Taha","doi":"10.1109/ISVLSI.2014.100","DOIUrl":null,"url":null,"abstract":"The memristor is a novel non-volatile device having a large variable resistance range. Physical memristors can be laid out in a high density grid known as a crossbar. In this paper we propose a memristor crossbar based static routing switch design. We logically connect two wires within a crossbar by setting their corresponding cross-point memristor to a low resistance state. Conversely we logically disconnect the wires by setting the corresponding memristor to a high resistance state. Our evaluations show that the proposed static switch consumes extremely low power and has a high density compared to existing designs.","PeriodicalId":405755,"journal":{"name":"2014 IEEE Computer Society Annual Symposium on VLSI","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Memristor Crossbar Based Programmable Interconnects\",\"authors\":\"Raqibul Hasan, T. Taha\",\"doi\":\"10.1109/ISVLSI.2014.100\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The memristor is a novel non-volatile device having a large variable resistance range. Physical memristors can be laid out in a high density grid known as a crossbar. In this paper we propose a memristor crossbar based static routing switch design. We logically connect two wires within a crossbar by setting their corresponding cross-point memristor to a low resistance state. Conversely we logically disconnect the wires by setting the corresponding memristor to a high resistance state. Our evaluations show that the proposed static switch consumes extremely low power and has a high density compared to existing designs.\",\"PeriodicalId\":405755,\"journal\":{\"name\":\"2014 IEEE Computer Society Annual Symposium on VLSI\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Computer Society Annual Symposium on VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISVLSI.2014.100\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Computer Society Annual Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2014.100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Memristor Crossbar Based Programmable Interconnects
The memristor is a novel non-volatile device having a large variable resistance range. Physical memristors can be laid out in a high density grid known as a crossbar. In this paper we propose a memristor crossbar based static routing switch design. We logically connect two wires within a crossbar by setting their corresponding cross-point memristor to a low resistance state. Conversely we logically disconnect the wires by setting the corresponding memristor to a high resistance state. Our evaluations show that the proposed static switch consumes extremely low power and has a high density compared to existing designs.