硅基量子点激光器的阈值线宽增强因子

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9673822

S. Ding, B. Dong, Heming Huang, J. Bowers, F. Grillot

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引用次数: 0

摘要

采用相位调制方法研究了硅基InAs/GaAs量子点激光器线宽增强因子在阈值以上的光谱依赖性。在阈值的两倍处测量的线宽增强因子值较低。这些结果证实了量子点材料的高质量。

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The above-threshold linewidth enhancement factor of silicon-based quantum dot lasers

The spectral dependence of the linewidth enhancement factor of silicon based InAs/GaAs quantum dot lasers is investigated above the threshold by using a phase modulation method. Low values of linewidth enhancement factor measured at twice the threshold are reported. Such results confirm the high quality of the quantum dot material.

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2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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