{"title":"用于验证模型和数据表的先进测量系统","authors":"S. Munk‐Nielsen, F. Blaabjerg, J. Pedersen","doi":"10.1109/CIPE.1994.396715","DOIUrl":null,"url":null,"abstract":"This paper describes an advanced measurement system for power electronic semiconductor devices. The measurement system is both used for characterization of devices and for determination of model-parameters in device models. The hardware in the system is described and can handle 1200 V/300 A. The measurement system has connection to simulation software such as SABER and PSPICE. Different single device measurement circuits are specified as well as different parameters can be extracted from each measurement. A PC controls the instruments and special menu-oriented software is developed. The software structure is described. Measurement examples on IGBT, diode and MCT are shown as well as extended measurements are presented like switching losses for different load currents. Finally, an example of a parameter extraction for a diode model is done where simulations in SABER and measurements are compared. It is concluded simulations and measurements agree well and the measurement system is a strong tool for further investigation of power semiconductor devices.<<ETX>>","PeriodicalId":123138,"journal":{"name":"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"An advanced measurement system for verification of models and datasheets\",\"authors\":\"S. Munk‐Nielsen, F. Blaabjerg, J. Pedersen\",\"doi\":\"10.1109/CIPE.1994.396715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes an advanced measurement system for power electronic semiconductor devices. The measurement system is both used for characterization of devices and for determination of model-parameters in device models. The hardware in the system is described and can handle 1200 V/300 A. The measurement system has connection to simulation software such as SABER and PSPICE. Different single device measurement circuits are specified as well as different parameters can be extracted from each measurement. A PC controls the instruments and special menu-oriented software is developed. The software structure is described. Measurement examples on IGBT, diode and MCT are shown as well as extended measurements are presented like switching losses for different load currents. Finally, an example of a parameter extraction for a diode model is done where simulations in SABER and measurements are compared. It is concluded simulations and measurements agree well and the measurement system is a strong tool for further investigation of power semiconductor devices.<<ETX>>\",\"PeriodicalId\":123138,\"journal\":{\"name\":\"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CIPE.1994.396715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIPE.1994.396715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An advanced measurement system for verification of models and datasheets
This paper describes an advanced measurement system for power electronic semiconductor devices. The measurement system is both used for characterization of devices and for determination of model-parameters in device models. The hardware in the system is described and can handle 1200 V/300 A. The measurement system has connection to simulation software such as SABER and PSPICE. Different single device measurement circuits are specified as well as different parameters can be extracted from each measurement. A PC controls the instruments and special menu-oriented software is developed. The software structure is described. Measurement examples on IGBT, diode and MCT are shown as well as extended measurements are presented like switching losses for different load currents. Finally, an example of a parameter extraction for a diode model is done where simulations in SABER and measurements are compared. It is concluded simulations and measurements agree well and the measurement system is a strong tool for further investigation of power semiconductor devices.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
