Y. Nagashima, S. Onuki, Y. Shimose, A. Yamada, T. Kikugawa
{"title":"采用非对称季包层结构的1480 nm泵浦激光器,以低功耗实现了>1.2 W的高输出功率","authors":"Y. Nagashima, S. Onuki, Y. Shimose, A. Yamada, T. Kikugawa","doi":"10.1109/ISLC.2004.1382748","DOIUrl":null,"url":null,"abstract":"By optimizing the quaternary composition of an n-cladding layer within a 1480-nm laser using an asymmetric-cladding structure, we have achieved saturation output power of 1.2-W with lowered power consumption.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"1480-nm pump laser with asymmetric quaternary cladding structure achieving high output power of >1.2 W with low power consumption\",\"authors\":\"Y. Nagashima, S. Onuki, Y. Shimose, A. Yamada, T. Kikugawa\",\"doi\":\"10.1109/ISLC.2004.1382748\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By optimizing the quaternary composition of an n-cladding layer within a 1480-nm laser using an asymmetric-cladding structure, we have achieved saturation output power of 1.2-W with lowered power consumption.\",\"PeriodicalId\":126641,\"journal\":{\"name\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2004.1382748\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1480-nm pump laser with asymmetric quaternary cladding structure achieving high output power of >1.2 W with low power consumption
By optimizing the quaternary composition of an n-cladding layer within a 1480-nm laser using an asymmetric-cladding structure, we have achieved saturation output power of 1.2-W with lowered power consumption.