生物相容性压电薄膜的第一性原理辅助三尺度分析

Hwisim Hwang, Y. Uetsuji, S. Sakata, K. Tsuchiya, E. Nakamachi
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引用次数: 2

摘要

本文提出了一种基于第一性原理辅助三尺度分析的过程晶体学算法,用于设计生物相容性压电薄膜。利用密度泛函理论中的伪势方法预测薄膜的晶体形态,如择优取向及其分数,以及基底上晶体团簇可能构象的结构稳定性。采用基于晶体均匀化理论的双尺度有限元分析方法,选择了一种微观尺度的晶体形态,得到了压电薄膜的宏观均匀化特性。进一步,我们的分析应用于现有的生物相容性压电BaTiO3薄膜,分别制备在SrTiO3(110), SrTiO3(001)和MgO(100)衬底上。微观结构择优取向和宏观结构均质介电常数的数值计算结果与实验结果吻合较好。此外,将本文提出的工艺晶体学算法应用于前人研究中第一性原理计算发现的新型生物相容性MgSiO3压电薄膜的生成。计算结果表明,Cr(110)衬底最适合于[101]取向MgSiO3的稳定晶体生长,且具有较高的压电应力常数,如e33= 5.39 C/m2和e31= -3.64 C/m2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Proposition of a First-Principles Aided Triple-Scale Analysis for Biocompatible Piezoelectric Thin Films
A process crystallography algorithm based on the first-principles aided triple-scale analysis is newly developed to design biocompatible piezoelectric thin films fabricated on a substrate. The pseudo-potential method within the density functional theory was used to predict the crystal morphology of thin film, such as preferred orientations and their fractions as well as the structural stability of possible conformations of crystal clusters on substrates. A crystal morphology at the micro scale was selected and macro homogenized properties of piezoelectric thin film were obtained through a double-scale finite element analysis based on the crystallographic homogenization theory. Further, our analysis was applied to the existent biocompatible piezoelectric BaTiO3 thin films, fabricated on SrTiO3(110), SrTiO3(001) and MgO(100) substrates. Numerical results of the preferred orientations of the micro structure and the homogenized dielectric constants of the macro structure showed good agreements with experimental results. Additionally, the proposed process crystallography algorithm was applied to the new biocompatible piezoelectric MgSiO3 thin film generation, which has been found by the first-principles calculation in the previous study. As a result, the computational result indicates that the Cr(110) substrate is most suitable for stable crystal growth of [101] oriented MgSiO3 and shows high piezoelectric stress constants, such as e33= 5.39 C/m2 and e31= -3.64 C/m2.
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