用于嵌入式应用的40 ns随机访问时间低电压2mb EEPROM存储器

Records of the 2003 International Workshop on Memory Technology, Design and Testing Pub Date : 2003-07-28 DOI:10.1109/MTDT.2003.1222365

J. Daga, Caroline Papaix, E. Racape, M. Combe, Vincent Sialelli, J. Guichaoua

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引用次数: 7

摘要

采用ATMEL 0.18 /spl mu/m嵌入式技术设计了2mb EEPROM存储器。给出了硅程序和读访问时间的测量结果，并提出了优化的生产测试流程。

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A 40 ns random access time low voltage 2Mbits EEPROM memory for embedded applications

2Mbits EEPROM memory has been designed using the ATMEL 0.18 /spl mu/m embedded technology. On silicon program and read access time measurements are given, and an optimized production testing flow is proposed.

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Records of the 2003 International Workshop on Memory Technology, Design and Testing

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