Hairong Wang, Qiaoyan Sun, Guishan Wu, Yuqin Yao, Yang Yu, Yixue Li
{"title":"低HCL蒸气环境下制备金红石型TiO2纳米棒阵列的AVO工艺及表征","authors":"Hairong Wang, Qiaoyan Sun, Guishan Wu, Yuqin Yao, Yang Yu, Yixue Li","doi":"10.1109/3M-NANO.2016.7824918","DOIUrl":null,"url":null,"abstract":"In this study, oriented rutile TiO2 nanorod arrays (NRAs) were directly grown on the titanium (Ti) thin films deposited on the Si substrate in a low concentration of hydrochloric acid aqueous solution vapor environment called acid vapor oxidation (AVO) process which is a facile and environmentally friendly hydrothermal route without using any catalysts, seeds or templates. The growth of the TiO2 NRAs can be controlled by adjusting the key experimental parameters, such as growth time and low HCL concentration and so on. The effects of the key experimental parameters on their morphologies and crystal structures were explored in detail by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and selected area electron diffraction. The results indicate that the growth time and the low HCL concentration have influence on tailoring the crystal structures, like density, diameter and crystallinity of the TiO2 NRAs. The rutile TiO2 NRAs were single crystalline and grown along the [1 0 1] direction. The rutile TiO2 NRAs prepared in a low HCL concentration vapor environment by AVO process could be widely used in kinds of applications, especially gas sensors which will be explored further in the follow work.","PeriodicalId":273846,"journal":{"name":"2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Facile preparation of rutile TiO2 nanorod arrays in a low HCL concentration vapor environment by AVO process and characterizations\",\"authors\":\"Hairong Wang, Qiaoyan Sun, Guishan Wu, Yuqin Yao, Yang Yu, Yixue Li\",\"doi\":\"10.1109/3M-NANO.2016.7824918\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, oriented rutile TiO2 nanorod arrays (NRAs) were directly grown on the titanium (Ti) thin films deposited on the Si substrate in a low concentration of hydrochloric acid aqueous solution vapor environment called acid vapor oxidation (AVO) process which is a facile and environmentally friendly hydrothermal route without using any catalysts, seeds or templates. The growth of the TiO2 NRAs can be controlled by adjusting the key experimental parameters, such as growth time and low HCL concentration and so on. The effects of the key experimental parameters on their morphologies and crystal structures were explored in detail by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and selected area electron diffraction. The results indicate that the growth time and the low HCL concentration have influence on tailoring the crystal structures, like density, diameter and crystallinity of the TiO2 NRAs. The rutile TiO2 NRAs were single crystalline and grown along the [1 0 1] direction. The rutile TiO2 NRAs prepared in a low HCL concentration vapor environment by AVO process could be widely used in kinds of applications, especially gas sensors which will be explored further in the follow work.\",\"PeriodicalId\":273846,\"journal\":{\"name\":\"2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/3M-NANO.2016.7824918\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3M-NANO.2016.7824918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Facile preparation of rutile TiO2 nanorod arrays in a low HCL concentration vapor environment by AVO process and characterizations
In this study, oriented rutile TiO2 nanorod arrays (NRAs) were directly grown on the titanium (Ti) thin films deposited on the Si substrate in a low concentration of hydrochloric acid aqueous solution vapor environment called acid vapor oxidation (AVO) process which is a facile and environmentally friendly hydrothermal route without using any catalysts, seeds or templates. The growth of the TiO2 NRAs can be controlled by adjusting the key experimental parameters, such as growth time and low HCL concentration and so on. The effects of the key experimental parameters on their morphologies and crystal structures were explored in detail by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and selected area electron diffraction. The results indicate that the growth time and the low HCL concentration have influence on tailoring the crystal structures, like density, diameter and crystallinity of the TiO2 NRAs. The rutile TiO2 NRAs were single crystalline and grown along the [1 0 1] direction. The rutile TiO2 NRAs prepared in a low HCL concentration vapor environment by AVO process could be widely used in kinds of applications, especially gas sensors which will be explored further in the follow work.