混合InGaAs/AlGaInAs多量子阱脊波导中的损耗测量

K. Bubke, M. Sorel, F. Robert, A. Bryce, J. Arnold, J. Marsh
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引用次数: 1

摘要

研究了InGaAs/AlGaInAs多量子阱脊波导中量子阱混频导致的带边偏移损耗。混合过程是基于溅射SiO/ sub2 /沉积和随后的快速热退火过程中在样品表面产生的点缺陷。结果表明,对于小波长偏移(60-80 nm),损耗大大低于最大带边偏移(150 nm)的样品。已测得最小损耗为6db /cm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Loss measurements in intermixed InGaAs/AlGaInAs multiple-quantum-well ridge waveguides
A study of the losses in InGaAs/AlGaInAs multiple-quantum-well ridge waveguides band edge shifted by quantum well intermixing is presented. The intermixing process is based on point defects generated on the sample surface during the deposition of sputtered SiO/sub 2/ and a subsequent rapid thermal annealing. It is demonstrated that for small wavelength shifts (60-80 nm), losses are considerably lower than in samples with maximum band edge shift (150 nm). Minimum losses of 6 dB/cm have been measured.
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