Sr取代对化学溶液沉积Pb(Zr0.50Ti0.50)O3薄膜可调性和介电性能的影响

N. Karan, D. Pradhan, J. Saavedra-Arias, N. M. Murari, R. Thomas, R. Katiyar, K. Sudheendran, K. Raju
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引用次数: 0

摘要

采用化学溶液沉积法在Pt/TiO2/SiO2/Si衬底上生长了(Pb1¿xSrx)(Zr0.5Ti0.5)O3 (x= 0 ~ 0.65)薄膜。薄膜在550 ~ 700℃的温度范围内结晶为单相钙钛矿结构。室温下介电常数和损耗切线随钙钛矿结构a位Sr取代率的增加而降低。Sr-取代使相变温度(Tc)降低,Sr- 40%的复合材料相变温度(Tc)低于室温。Sr取代降低了室温可调性,但k因子略有提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Sr substitution on tunability and dielectric properties in Pb(Zr0.50Ti0.50)O3 thin films fabricated by chemical solution deposition
(Pb1¿xSrx)(Zr0.5Ti0.5)O3 ( x= 0 to 0.65) thin films were grown on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. Films were crystallized in the single phase perovskite structure in the temperature range ( 550¿700°C). Dielectric constant and loss tangent at room temperature reduced as the percentage of Sr substitution increased at the A-site of this perovskite structure. The phase transition temperature (Tc) lowered with Sr-substitution and Tc below the room temperature was obtained for composition with Sr ¿ 40%. The room temperature tunability reduced with Sr substitution, however, the k-factor slightly improved.
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