压力对IGBT特性影响的研究

Y. Wang, Rui Jin, Li Li, Jiang Liu, Mingchao Gao
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引用次数: 0

摘要

为了实现良好的电气连接,在Press-Pack IGBT器件使用过程中需要施加一定的机械压力。由于机械压力的影响,与传统的焊接IGBT器件相比,IGBT芯片的特性会发生变化。因此,本文分析了半导体的物理机制,并采用二维有限元模拟方法和实验研究了机械应力对IGBT芯片电学特性的影响。仿真和实验结果表明,随着机械应力的增加,IGBT芯片的饱和电压和下降时间发生了明显变化,但阈值电压的变化可以忽略不计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study on the influence of pressure on the characteristics of IGBT
In order to achieve good electrical connection, a certain mechanical pressure needs to be applied during the use of Press-Pack IGBT devices. Due to the influence of mechanical pressure, the characteristics of IGBT chips will change compared with conventional welded IGBT devices. Therefore, this paper analyzes the semiconductor physical mechanism, and studies the influence of mechanical stress on the electrical characteristics of IGBT chip by using 2D finite element simulation method and experiment. The simulated and experimental results showed that the saturation voltage and fall time of IGBT chips change obviously when the mechanical stress increases, but the change of threshold voltage can be ignored.
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