超短上升时间方波激励下双绞线的局部放电行为

Zhuo Wei, Haoyang You, Boxue Hu, Risha Na, Jin Wang
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引用次数: 11

摘要

与传统半导体器件相比,宽带隙半导体器件具有更高的工作电压、频率和温度,因此其应用日益广泛。WBG半导体器件能够产生具有超高dv/dt(超短上升时间)的电压,这将改变各种电气设备中的电压应力,例如逆变器控制的电机,从而改变局部放电(PD)行为。结合逆变器控制的电机绕组的局部放电检测,即使是在缓慢上升的电压下,本质上也是复杂的,因此研究超高速方波电压下的局部放电行为是非常必要的。本文介绍了一种能产生超高速方波电压的脉冲发生器对双绞线样品施加应力的实验观察和结果。根据实验结果,提出了超快dv/dt方波激励下PD的行为和机理的陈述和假设。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Partial Discharge Behavior on Twisted Pair under Ultra-short Rise Time Square-wave Excitations
The use of wide-bandgap (WBG) semiconductor device is increasing due to its capability to operate at much higher voltage, frequency and temperature compared with traditional semiconductor device. WBG semiconductor device is capable to generate voltages with ultra-high dv/dt (ultra-short rise time), which would alter the voltage stress in various electrical apparatus, e.g., inverter-controlled motors, and consequently change partial discharge (PD) behavior. Combine this with the fact that PD detection in inverter-controlled motor winding, even with slow-rising voltages, is intrinsically complicated, the study of PD behavior under ultra-fast squarewave voltages is much needed. In this paper, experimental observations and results for twisted pair samples stressed by an impulse generator with the ability of generating ultra-fast square-wave voltage are presented. Statements and hypotheses on PD behaviors and mechanism under ultra-fast dv/dt squarewave excitations are also put forward based on the test results.
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