忆阻器器件的新建模技术，以覆盖与忆阻理论的偏差

2014 International Conference on Electronics, Information and Communications (ICEIC) Pub Date : 1900-01-01 DOI:10.1109/ELINFOCOM.2014.6914370

M. G. A. Mohamed, H. Kim, Tae-Won Cho

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引用次数: 2

摘要

金属氧化物结的行为在2008年之后被认为是记忆行为。这种行为与记忆行为并不完全匹配。为了匹配器件行为，需要扩展记忆理论。在本文中，我们提出了一种建模技术来模拟这些连接，并展示了它们的行为如何以及为什么不完全是记忆行为。仿真结果验证了所提模型的正确性，与实测结果吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New modeling technique for memristor devices to cover deviation from memristive theory

Behavior of metal-oxide junctions has been addressed as a memristive behavior after 2008. This behavior is not exactly matched with memristive behavior. Extension of memristive theory is needed to match device behavior. In this paper, we present a modeling technique to model these junctions and show how and why their behavior is not exactly memristive behavior. Simulation results verify the proposed model and fit the measurement results.

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2014 International Conference on Electronics, Information and Communications (ICEIC)

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