使用亚微米铜互连的多层金属

B. Rogers, S. Bothra, S. Bobbio, M. Kellam
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引用次数: 0

摘要

与目前用于超大规模集成(ULSI)技术的铝合金和屏障层相比,铜基多层冶金技术具有非常显著的优势。然而,在铜可以成功地集成到ULSI系统之前,必须解决许多重要的可靠性和处理问题。在MCNC,一项综合计划正在进行中,以开发综合铜冶金工艺。本文分析了标度对互连延迟的影响,证明了铜冶金在ULSI电路中的潜在优势。然后,介绍了铜综合冶金工艺的发展,包括铜蚀刻结果,铜包层方法以减轻可靠性问题,以及一种新的通孔链结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multilevel Metal Using Submicron Copper Interconnects
A copper-based multilevel metallurgy potentially offers very significant benefits compared to the aluminum alloys and barrier layers that currently are being used in ultralarge-scale integrated (ULSI) technology. However, before copper can be successfully integrated into ULSI systems, a number of important reliability and processing issues must be addressed. At MCNC, a comprehensive program is underway to develop an integrated copper metallurgy process. In this paper, an analysis of the effects of scaling on interconnect delay is given, demonstrating the potential benefits of a copper metallurgy for ULSI circuits. Then, work toward the development of an integrated copper metallurgy process is presented, including copper etching results, a copper cladding methodology to alleviate reliability problems, and a novel via chain structure.
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