In和Ga在硒化Cu-In和Cu-Ga前驱体中的扩散

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI:10.1109/PVSC.1996.564250

M. Marudachalam, I. Hichri, R. Birkmire, J. Schultz, A. Swartzlander, M. Al‐Jassim

{"title":"In和Ga在硒化Cu-In和Cu-Ga前驱体中的扩散","authors":"M. Marudachalam, I. Hichri, R. Birkmire, J. Schultz, A. Swartzlander, M. Al‐Jassim","doi":"10.1109/PVSC.1996.564250","DOIUrl":null,"url":null,"abstract":"The interdiffusion of Ga and In in a CuGaSe/sub 2//CuInSe/sub 2/ thin film diffusion couple and the diffusion of In into CuGaSe/sub 2/ thin films were studied by Auger depth profiling. CuGaSe/sub 2/ and CuInSe/sub 2/ were obtained via selenization by H/sub 2/Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe/sub 2//CuInSe/sub 2/ diffusion couple was annealed at 650/spl deg/C for 30 minutes in an argon atmosphere. The thin film source of In was diffused into CuGaSe/sub 2/ in the temperature range of 400/spl deg/C to 600/spl deg/C for 30 minutes in an argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe/sub 2//GuInSe/sub 2/ couple annealed at 650/spl deg/C, and the diffusion coefficients of In in CuGaSe/sub 2/ films diffusion annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650/spl deg/C in the diffusion couple are similar (D/sub In/=1.5/spl times/10/sup -11/ cm/sup 2//sec and D/sub Ga/=4.0/spl times/10/sup -11/ cm/sup 2//sec). The diffusion coefficients of In in CuGaSe/sub 2/ thin films varied from 2.0/spl times/10/sup -13/ cm/sup 2//sec to 4.5/spl times/10/sup -12/ cm/sup 2//sec in the temperature range of 400/spl deg/C to 600/spl deg/C.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Diffusion of In and Ga in selenized Cu-In and Cu-Ga precursors\",\"authors\":\"M. Marudachalam, I. Hichri, R. Birkmire, J. Schultz, A. Swartzlander, M. Al‐Jassim\",\"doi\":\"10.1109/PVSC.1996.564250\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The interdiffusion of Ga and In in a CuGaSe/sub 2//CuInSe/sub 2/ thin film diffusion couple and the diffusion of In into CuGaSe/sub 2/ thin films were studied by Auger depth profiling. CuGaSe/sub 2/ and CuInSe/sub 2/ were obtained via selenization by H/sub 2/Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe/sub 2//CuInSe/sub 2/ diffusion couple was annealed at 650/spl deg/C for 30 minutes in an argon atmosphere. The thin film source of In was diffused into CuGaSe/sub 2/ in the temperature range of 400/spl deg/C to 600/spl deg/C for 30 minutes in an argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe/sub 2//GuInSe/sub 2/ couple annealed at 650/spl deg/C, and the diffusion coefficients of In in CuGaSe/sub 2/ films diffusion annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650/spl deg/C in the diffusion couple are similar (D/sub In/=1.5/spl times/10/sup -11/ cm/sup 2//sec and D/sub Ga/=4.0/spl times/10/sup -11/ cm/sup 2//sec). The diffusion coefficients of In in CuGaSe/sub 2/ thin films varied from 2.0/spl times/10/sup -13/ cm/sup 2//sec to 4.5/spl times/10/sup -12/ cm/sup 2//sec in the temperature range of 400/spl deg/C to 600/spl deg/C.\",\"PeriodicalId\":410394,\"journal\":{\"name\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1996.564250\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1996.564250","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

采用Auger深度剖面法研究了Ga和In在CuGaSe/sub - 2/ CuGaSe/sub - 2/ CuGaSe/sub - 2/薄膜扩散对中的相互扩散以及In在CuGaSe/sub - 2/薄膜中的扩散。对顺序沉积的Cu-Ga和Cu-In层进行H/sub 2/Se硒化处理，得到CuGaSe/sub 2/和CuInSe/sub 2/。将CuGaSe/sub 2//CuInSe/sub 2/扩散偶联在650/spl℃氩气气氛中退火30 min。将In薄膜源在氩气气氛中，在400 ~ 600℃的温度范围内扩散到CuGaSe/ sub2 /中，持续30分钟。测定了650℃退火CuGaSe/sub - 2// gase /sub - 2/薄膜中In和Ga的体扩散系数，以及不同温度退火CuGaSe/sub - 2/薄膜中In的扩散系数。In和Ga在650/spl℃扩散对中的相互扩散系数相似(D/sub In/=1.5/spl次/10/sup -11/ cm/sup 2//sec, D/sub Ga/=4.0/spl次/10/sup -11/ cm/sup 2//sec)。在400 ~ 600/spl℃范围内，In在CuGaSe/ sub2 /薄膜中的扩散系数在2.0/spl次/10/sup ~ 13/ cm/sup 2/ sec ~ 4.5/spl次/10/sup ~ 12/ cm/sup 2/ sec之间变化。

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Diffusion of In and Ga in selenized Cu-In and Cu-Ga precursors

The interdiffusion of Ga and In in a CuGaSe/sub 2//CuInSe/sub 2/ thin film diffusion couple and the diffusion of In into CuGaSe/sub 2/ thin films were studied by Auger depth profiling. CuGaSe/sub 2/ and CuInSe/sub 2/ were obtained via selenization by H/sub 2/Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe/sub 2//CuInSe/sub 2/ diffusion couple was annealed at 650/spl deg/C for 30 minutes in an argon atmosphere. The thin film source of In was diffused into CuGaSe/sub 2/ in the temperature range of 400/spl deg/C to 600/spl deg/C for 30 minutes in an argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe/sub 2//GuInSe/sub 2/ couple annealed at 650/spl deg/C, and the diffusion coefficients of In in CuGaSe/sub 2/ films diffusion annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650/spl deg/C in the diffusion couple are similar (D/sub In/=1.5/spl times/10/sup -11/ cm/sup 2//sec and D/sub Ga/=4.0/spl times/10/sup -11/ cm/sup 2//sec). The diffusion coefficients of In in CuGaSe/sub 2/ thin films varied from 2.0/spl times/10/sup -13/ cm/sup 2//sec to 4.5/spl times/10/sup -12/ cm/sup 2//sec in the temperature range of 400/spl deg/C to 600/spl deg/C.

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Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

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