InP/GaInAs异质结双极晶体管和光电晶体管的优化

2002 International Topical Meeting on Microwave Photonics Pub Date : 1900-01-01 DOI:10.1109/MWP.2002.1158932

D. Ritter, B. Sheinman, V. Sidorov, S. Cohen, A. Gavrilov, Y. Vered, G. Zohar, J. Lasri

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引用次数: 6

摘要

描述了p-i-n光电探测器和异质结双极晶体管在单片集成中所遇到的权衡。为了进一步提高单个晶体管的频率性能，与外延相关的主要挑战是通过带隙工程缩短基极传输时间，以及基极发射极和基极集电极结的适当分级。

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Optimization of InP/GaInAs heterojunction bipolar transistors and phototransistors

The tradeoffs encountered in monolithic integration of p-i-n photodetectors and heterojunction bipolar transistors are described. For further improving the frequency performance of the individual transistors, the main challenges related to epitaxy are shortening of the base transit time by band gap engineering, and the proper grading of the base emitter and base collector junctions.

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2002 International Topical Meeting on Microwave Photonics

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