横截面纳米压痕:适用于测试半导体元件中聚酰亚胺的附着力

Moritz Hartleb, P. Imrich, J. Zechner, Thomas Walter, G. Khatibi
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引用次数: 0

摘要

本文研究了截面纳米压痕(CSN)方法在粘连厚韧性材料(如聚酰亚胺层)上的适用性。研究了沉积在Si衬底上的$\mathrm{ASiO}_{\mathrm{x}}/\mathrm{A1}/\mathrm{Si}_{\mathrm{x}}\mathrm{N}} {\mathrm{y}}$/聚酰亚胺叠层,有意削弱衬底与$\mathrm{SiO}_{\mathrm{x}}$之间的界面,以引起长时间稳定的裂纹扩展,从而减轻了分析。在扫描电镜和EDX分析中证实了开裂的界面。临界能量释放率($\mathrm{G}_{\mathrm{c}}$)通过解析法确定,并通过有限元分析(FEA)进行数值计算,比较两种方法的有效性。有限元分析进一步确定了Al和聚酰亚胺层的塑性影响,以及在CSN实验中由于聚酰亚胺层而产生的si楔的弛豫。为了分离楔形松弛和塑性的影响,采用分析方法与有限元模拟结果进行了混合评价。实验结果表明,与有限元法相比,解析法低估了能量释放率,而混合法高估了粘附力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cross-sectional Nanoindentation: Applicability for testing Polyimide adhesion in semiconductor components
This work investigates the applicability of the cross-sectional nanoindentation (CSN) method for the adhesion of thick ductile materials such as polyimide layers. $\mathrm{ASiO}_{\mathrm{x}}/\mathrm{A1}/\mathrm{Si}_{\mathrm{x}}\mathrm{N}_{\mathrm{y}}$/polyimide stack deposited on a Si substrate was investigated, where the interface between the substrate and the $\mathrm{SiO}_{\mathrm{x}}$ was intentionally weakened to provoke long and stable crack propagation which alleviates the analysis. This cracking was investigated in an SEM and the opened interface confirmed using EDX analysis. The critical energy release rate ($\mathrm{G}_{\mathrm{c}}$) was determined via an analytical method and numerically by using finite element analysis (FEA) to compare the effectiveness of the respective methods. FEA further allowed to determine the influence of plasticity in the Al and polyimide layers and the relaxation of the Si-wedge, that is created during the CSN experiment, due to the polyimide layer. To separate the effect of wedge-relaxation and plasticity a mixed evaluation of using analytical methods with values obtained from FEA simulations was also performed. The experimental results show that the analytical method underestimates energy release rate compared to the FEA method, while a mixed approach overestimates the adhesion.
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