高性能1700V IGBT模块，采用第七代芯片组/封装技术

2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) Pub Date : 2016-09-01 DOI:10.1109/EPE.2016.7695274

M. Sawada, S. Yoshiwatari, Hiroaki Ichikawa, Y. Onozawa, O. Ikawa, T. Heinzel, Alexander Theisen

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引用次数: 1

摘要

介绍了采用第七代(7G) IGBT技术的1700V IGBT模块。通过进一步改进芯片特性和开发新的高可靠性封装材料和技术，模块的性能得到了显著提高。此外，通过成功实现新型增强强度AlN隔离衬底，实现了低热阻抗的额外热性能。新芯片和封装技术的集成使瓦密度显著提高约30% (11.2kW/cm2 (6G)-> 14.4kW/cm2 (7G))成为可能。

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High performance 1700V IGBT module with the 7th generation chipset/package technologies

This paper describes 1700V IGBT module with the 7th generation (7G) IGBT technologies. By further improvement of the chip characteristics and the development of new high reliability package materials and technologies, the performance of the modules are significantly improved. In addition, an extra thermal performance of lower thermal impedance is achieved with successful implementation of novel enhanced strength AlN isolation substrate. The integration of new chip and package technologies make it possible to achieve significant increase of watts density of about 30% (11.2kW/cm2 (6G)-> 14.4kW/cm2 (7G)).

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2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe)

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