{"title":"工作在77k和300k下的n沟道mosfet的半解析衬底电流模型","authors":"W. Chang, Shen-Li Chen, C.S. Ho, Y. Chen","doi":"10.1109/SOUTHC.1996.535092","DOIUrl":null,"url":null,"abstract":"In our study, we characterize the temperature and stress dependences of the substrate current, and present a complete substrate-current model which is suitable for both room temperature and liquid-nitrogen temperature operations. The impact ionization phenomenon as well as the temperature and voltage dependence of saturation voltage are also investigated. The theoretical results of our complete substrate-current model from 77 K to 300 K are found in good agreement with the measurement data. This model is suitable for MOSFETs simulation.","PeriodicalId":199600,"journal":{"name":"Southcon/96 Conference Record","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A semi-analytical substrate current model of N-channel MOSFETs operating at 77 K and 300 K\",\"authors\":\"W. Chang, Shen-Li Chen, C.S. Ho, Y. Chen\",\"doi\":\"10.1109/SOUTHC.1996.535092\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In our study, we characterize the temperature and stress dependences of the substrate current, and present a complete substrate-current model which is suitable for both room temperature and liquid-nitrogen temperature operations. The impact ionization phenomenon as well as the temperature and voltage dependence of saturation voltage are also investigated. The theoretical results of our complete substrate-current model from 77 K to 300 K are found in good agreement with the measurement data. This model is suitable for MOSFETs simulation.\",\"PeriodicalId\":199600,\"journal\":{\"name\":\"Southcon/96 Conference Record\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Southcon/96 Conference Record\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOUTHC.1996.535092\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Southcon/96 Conference Record","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOUTHC.1996.535092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A semi-analytical substrate current model of N-channel MOSFETs operating at 77 K and 300 K
In our study, we characterize the temperature and stress dependences of the substrate current, and present a complete substrate-current model which is suitable for both room temperature and liquid-nitrogen temperature operations. The impact ionization phenomenon as well as the temperature and voltage dependence of saturation voltage are also investigated. The theoretical results of our complete substrate-current model from 77 K to 300 K are found in good agreement with the measurement data. This model is suitable for MOSFETs simulation.
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