用于后端光子集成的锗硅光电二极管

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141912

S. Marzen, E. Postelnicu, K. Wada, J. Michel, L. Kimerling

{"title":"用于后端光子集成的锗硅光电二极管","authors":"S. Marzen, E. Postelnicu, K. Wada, J. Michel, L. Kimerling","doi":"10.1109/SiPhotonics55903.2023.10141912","DOIUrl":null,"url":null,"abstract":"Ge-on-Si p-i-n photodiodes with graded boron doping were grown and annealed at low temperatures. Annealing improved diode characteristics, with the highest performing diode annealed at 500°C for 3hr, Responsivity = 0.15 A/W and Jd = 170 µA/cm2at λ=1310nm, 0.5µm Ge, and no AR coating.","PeriodicalId":105710,"journal":{"name":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Germanium on Silicon Photodiodes for Back-End-Of-Line Photonic Integration\",\"authors\":\"S. Marzen, E. Postelnicu, K. Wada, J. Michel, L. Kimerling\",\"doi\":\"10.1109/SiPhotonics55903.2023.10141912\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ge-on-Si p-i-n photodiodes with graded boron doping were grown and annealed at low temperatures. Annealing improved diode characteristics, with the highest performing diode annealed at 500°C for 3hr, Responsivity = 0.15 A/W and Jd = 170 µA/cm2at λ=1310nm, 0.5µm Ge, and no AR coating.\",\"PeriodicalId\":105710,\"journal\":{\"name\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiPhotonics55903.2023.10141912\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiPhotonics55903.2023.10141912","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用梯度硼掺杂制备了Ge-on-Si - p-i-n光电二极管，并进行了低温退火。退火改善了二极管的性能，在500°C下退火3hr，灵敏度= 0.15 A/W, Jd = 170µA/cm2at λ=1310nm, 0.5µm Ge，无AR涂层，二极管性能最高。

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Germanium on Silicon Photodiodes for Back-End-Of-Line Photonic Integration

Ge-on-Si p-i-n photodiodes with graded boron doping were grown and annealed at low temperatures. Annealing improved diode characteristics, with the highest performing diode annealed at 500°C for 3hr, Responsivity = 0.15 A/W and Jd = 170 µA/cm2at λ=1310nm, 0.5µm Ge, and no AR coating.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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