一种具有折叠漂移区的新型高压LDMOS

2016 16th International Workshop on Junction Technology (IWJT) Pub Date : 2016-05-09 DOI:10.1109/IWJT.2016.7486668

Ling Du, Yufeng Guo, Jiafei Yao, Jun Zhang, Kemeng Yang, Man Li

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引用次数: 0

摘要

提出了一种具有折叠漂移区(FDR)结构的新型高压LDMOS。该结构在有限漂移区长度内延长了电流通路的有效长度，并使电场分布均匀，从而获得较高的击穿电压。利用二维器件模拟器MEDICI对其结构参数进行了优化，并对其特性进行了研究。仿真结果表明，与传统器件相比，该器件的电场、击穿电压和比导通电阻得到了有效提高。在硅层厚度为10μm、氧化层厚度为3μm、漂移区长度为28μm的LDMOS上获得了超过600V的击穿电压。

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A novel high-voltage LDMOS with Folded Drift Region

This paper proposes a novel high-voltage LDMOS with Folded Drift Region (FDR) structure. The structure extends the effective length of the current path in the limited drift region length, and uniformthe electric field profile in order to have a high breakdown voltage. The structure parameters are optimized and the characteristics are investigated by a 2D device simulator MEDICI. The simulation results show that the electric field, breakdown voltage, and specific on-resistance are effectively improved when compared with those of the conventional device. A breakdown voltage over 600V is obtained on the proposed LDMOS with 10μm thick silicon layer, 3μm buried oxide and 28μm drift region length.

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2016 16th International Workshop on Junction Technology (IWJT)

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