蓝色InGaN/GaN量子阱异质结双极发光晶体管的表征

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126503

I. Tseng, Hao-Yu Lan, C. Wu

{"title":"蓝色InGaN/GaN量子阱异质结双极发光晶体管的表征","authors":"I. Tseng, Hao-Yu Lan, C. Wu","doi":"10.1109/EDSSC.2017.8126503","DOIUrl":null,"url":null,"abstract":"The electrical and optical characteristics of the three port InGaN/GaN blue quantum-well heterojunction bipolar light-emitting transistors (QW HBLETs) on sapphire substrate are reported. The base-emitter (BE) light-emitting diode and base-collector (BC) diode are demonstrated. Next, the Gummel-poon plot is measured. Moreover, the collector current-voltage (I-V) and light-current-voltage (LI-V) characteristics demonstrate that the InGaN/GaN blue QW HBLETs are unique devices with dual output and have potential in the application of visible light communication (VLC).","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of blue InGaN/GaN quantum-well heterojunction bipolar light emitting transistors\",\"authors\":\"I. Tseng, Hao-Yu Lan, C. Wu\",\"doi\":\"10.1109/EDSSC.2017.8126503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical and optical characteristics of the three port InGaN/GaN blue quantum-well heterojunction bipolar light-emitting transistors (QW HBLETs) on sapphire substrate are reported. The base-emitter (BE) light-emitting diode and base-collector (BC) diode are demonstrated. Next, the Gummel-poon plot is measured. Moreover, the collector current-voltage (I-V) and light-current-voltage (LI-V) characteristics demonstrate that the InGaN/GaN blue QW HBLETs are unique devices with dual output and have potential in the application of visible light communication (VLC).\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8126503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

报道了蓝宝石衬底上三端口InGaN/GaN蓝色量子阱异质结双极发光晶体管(QW HBLETs)的电学和光学特性。演示了基极-发射极(BE)发光二极管和基极-集电极(BC)发光二极管。接下来，测量gumell -poon情节。此外，集电极电流-电压(I-V)和光电流-电压(LI-V)特性表明，InGaN/GaN蓝色QW hblet具有独特的双输出器件，在可见光通信(VLC)中具有应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Characterization of blue InGaN/GaN quantum-well heterojunction bipolar light emitting transistors

The electrical and optical characteristics of the three port InGaN/GaN blue quantum-well heterojunction bipolar light-emitting transistors (QW HBLETs) on sapphire substrate are reported. The base-emitter (BE) light-emitting diode and base-collector (BC) diode are demonstrated. Next, the Gummel-poon plot is measured. Moreover, the collector current-voltage (I-V) and light-current-voltage (LI-V) characteristics demonstrate that the InGaN/GaN blue QW HBLETs are unique devices with dual output and have potential in the application of visible light communication (VLC).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

自引率

0.00%

发文量