Super-junction RB-IGBT with suppression of impact ionization for enhancing bidirectional blocking capability

A super-junction reverse-blocking insulated-gate bipolar transistor with suppression of impact ionization (SII-RB-IGBT) is proposed in this letter. The SII-RB-IGBT with ultra-small drift region features the additional leakage current access (LCA) between the gate and shorted-collector trench for suppression of impact ionization at the position of electric field peak. Note that by the suppression of impact ionization, the SII-RB-IGBT obtains the 1520 V forward-blocking voltage $(BV_{F})$ and 1522 V reverse-blocking voltage $(BV_{R})$ at the drift region of 100 $\mu m$, which is shorter than super-junction reverse blocking IGBT with shorted-collector trench (SCT-RB-IGBT) and non-punch-through reverse blocking IGBT (NPT-RB-IGBT). Moreover, the SII-RB-IGBT has the superior trade-off of on-state voltage $(V_{on})-turn-off$ loss $(E_{off)}$ and $V_{on}-BV_{F}$.