绝缘体上锗垂直p-i-n光电探测器的暗电流分析

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8925924

Bongkwon Son, Yiding Lin, K. Lee, C. S. Tan

{"title":"绝缘体上锗垂直p-i-n光电探测器的暗电流分析","authors":"Bongkwon Son, Yiding Lin, K. Lee, C. S. Tan","doi":"10.1109/GROUP4.2019.8925924","DOIUrl":null,"url":null,"abstract":"Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dark Current Analysis of Vertical p-i-n Photodetectors on a Germanium-on-Insulator Platform\",\"authors\":\"Bongkwon Son, Yiding Lin, K. Lee, C. S. Tan\",\"doi\":\"10.1109/GROUP4.2019.8925924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.\",\"PeriodicalId\":221282,\"journal\":{\"name\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2019.8925924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2019.8925924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

分析了绝缘子上锗平台上垂直p-i-n光电探测器的暗电流。在储备偏置下，其活化能在0.15 ~ 0.36 eV之间。暗电流的产生由肖克利-里德-霍尔效应和陷阱辅助隧道效应来解释。这项工作提供了对绝缘体上锗光电探测器的解释，并提出了抑制硅基锗光电探测器暗电流产生的替代方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Dark Current Analysis of Vertical p-i-n Photodetectors on a Germanium-on-Insulator Platform

Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

自引率

0.00%

发文量