一种s波段应用的带高谐波抑制匹配电路的线性增强宽带f类功率放大器

Jun-ming Lin, Zhi-hao Zhang, Y. Kai, Sizhen Li, Q. Cai, Jiajin Li, Gary Zhang
{"title":"一种s波段应用的带高谐波抑制匹配电路的线性增强宽带f类功率放大器","authors":"Jun-ming Lin, Zhi-hao Zhang, Y. Kai, Sizhen Li, Q. Cai, Jiajin Li, Gary Zhang","doi":"10.1109/ICMMT.2016.7761745","DOIUrl":null,"url":null,"abstract":"A broadband power amplifier (PA) with linearity enhanced technology for S-band applications, is presented. For good linearity and high efficiency performance, a Class-F PA core with improved linearizing bias circuits is employed and integrated on a 1.1×1.1×0.82 mm3 die using an InGaP/GaAs HBT process. The linearizing bias circuit is composed of current mirrors, compensated inductor and capacitor, thus that the overall power gain is enhanced as well as the gain flatness. Furthermore, several LC serial harmonic traps are immersed into the broadband output matching circuit for good harmonic suppression performance. To demonstrate the feasibility of the concept, the PA was tested with a continuous wave (CW) signal and generated an output power of 34 dBm and achieved a PAE of 54.5% at 2GHz. In addition, excellent harmonic suppression levels of less than -57 dBc across the second to fifth harmonic are obtained.","PeriodicalId":438795,"journal":{"name":"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A linearity enhanced broadband Class-F power amplifier with high harmonic suppressed matching circuits for S-band applications\",\"authors\":\"Jun-ming Lin, Zhi-hao Zhang, Y. Kai, Sizhen Li, Q. Cai, Jiajin Li, Gary Zhang\",\"doi\":\"10.1109/ICMMT.2016.7761745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband power amplifier (PA) with linearity enhanced technology for S-band applications, is presented. For good linearity and high efficiency performance, a Class-F PA core with improved linearizing bias circuits is employed and integrated on a 1.1×1.1×0.82 mm3 die using an InGaP/GaAs HBT process. The linearizing bias circuit is composed of current mirrors, compensated inductor and capacitor, thus that the overall power gain is enhanced as well as the gain flatness. Furthermore, several LC serial harmonic traps are immersed into the broadband output matching circuit for good harmonic suppression performance. To demonstrate the feasibility of the concept, the PA was tested with a continuous wave (CW) signal and generated an output power of 34 dBm and achieved a PAE of 54.5% at 2GHz. In addition, excellent harmonic suppression levels of less than -57 dBc across the second to fifth harmonic are obtained.\",\"PeriodicalId\":438795,\"journal\":{\"name\":\"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2016.7761745\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2016.7761745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

提出了一种用于s波段应用的线性增强宽带功率放大器。为了获得良好的线性度和高效率,采用改进的线性化偏置电路的f类PA核心,并使用InGaP/GaAs HBT工艺将其集成在1.1×1.1×0.82 mm3芯片上。线性化偏置电路由电流反射镜、补偿电感和电容组成,提高了整体功率增益和增益平坦度。此外,在宽带输出匹配电路中嵌入多个LC串联谐波陷阱,具有良好的谐波抑制性能。为了证明这一概念的可行性,对连续波(CW)信号进行了测试,产生了34 dBm的输出功率,在2GHz下实现了54.5%的PAE。此外,在第二到第五次谐波中获得了小于-57 dBc的优异谐波抑制水平。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A linearity enhanced broadband Class-F power amplifier with high harmonic suppressed matching circuits for S-band applications
A broadband power amplifier (PA) with linearity enhanced technology for S-band applications, is presented. For good linearity and high efficiency performance, a Class-F PA core with improved linearizing bias circuits is employed and integrated on a 1.1×1.1×0.82 mm3 die using an InGaP/GaAs HBT process. The linearizing bias circuit is composed of current mirrors, compensated inductor and capacitor, thus that the overall power gain is enhanced as well as the gain flatness. Furthermore, several LC serial harmonic traps are immersed into the broadband output matching circuit for good harmonic suppression performance. To demonstrate the feasibility of the concept, the PA was tested with a continuous wave (CW) signal and generated an output power of 34 dBm and achieved a PAE of 54.5% at 2GHz. In addition, excellent harmonic suppression levels of less than -57 dBc across the second to fifth harmonic are obtained.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信