基于真空微电子技术的高频器件的未来展望

4th IEEE International Conference on Vacuum Electronics, 2003 Pub Date : 2003-05-28 DOI:10.1109/IVEC.2003.1286055

K. Yokoo

{"title":"基于真空微电子技术的高频器件的未来展望","authors":"K. Yokoo","doi":"10.1109/IVEC.2003.1286055","DOIUrl":null,"url":null,"abstract":"Field emission micro cathode and its array are promising to apply to high frequency devices due to a high current density of emitted electrons and a cathode size as small as micron or less. The paper describes prospects of vacuum microelectronic devices at high frequency as high as microwave and optical frequencies.","PeriodicalId":203178,"journal":{"name":"4th IEEE International Conference on Vacuum Electronics, 2003","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Future prospects for high frequency devices based on vacuum microelectronics\",\"authors\":\"K. Yokoo\",\"doi\":\"10.1109/IVEC.2003.1286055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Field emission micro cathode and its array are promising to apply to high frequency devices due to a high current density of emitted electrons and a cathode size as small as micron or less. The paper describes prospects of vacuum microelectronic devices at high frequency as high as microwave and optical frequencies.\",\"PeriodicalId\":203178,\"journal\":{\"name\":\"4th IEEE International Conference on Vacuum Electronics, 2003\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"4th IEEE International Conference on Vacuum Electronics, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVEC.2003.1286055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"4th IEEE International Conference on Vacuum Electronics, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVEC.2003.1286055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

场发射微阴极及其阵列由于其发射电子的高电流密度和阴极尺寸小至微米或更小而有希望应用于高频器件。本文展望了真空微电子器件在高微波、高光频率下的发展前景。

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Future prospects for high frequency devices based on vacuum microelectronics

Field emission micro cathode and its array are promising to apply to high frequency devices due to a high current density of emitted electrons and a cathode size as small as micron or less. The paper describes prospects of vacuum microelectronic devices at high frequency as high as microwave and optical frequencies.

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来源期刊

4th IEEE International Conference on Vacuum Electronics, 2003

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