{"title":"隧道二极管与肖特基二极管在2.4 GHz低输入功率区整流器中的比较","authors":"Veselin Manev, H. Visser, P. Baltus, Hao Gao","doi":"10.1109/WPTC45513.2019.9055615","DOIUrl":null,"url":null,"abstract":"This paper presents a comparison of tunnel diode to Schottky diode in rectifier at 2.4 GHz under −10dBm input power region. The tunnel diode based rectifier has an advantage of quantum tunneling effect. Therefore it can achieve higher rectification efficiencies. In this work, GI401A tunnel diode and HSMS-285B Schottky diode are used. The input power range of measurements are from −10dBm to − 40dBm. In the same topology, same material, and the same input power situation, the tunnel diode based rectifier achieves 12.6% efficiency, while the Schottky diode based rectifier achieves 6.53% efficiency.","PeriodicalId":148719,"journal":{"name":"2019 IEEE Wireless Power Transfer Conference (WPTC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region\",\"authors\":\"Veselin Manev, H. Visser, P. Baltus, Hao Gao\",\"doi\":\"10.1109/WPTC45513.2019.9055615\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a comparison of tunnel diode to Schottky diode in rectifier at 2.4 GHz under −10dBm input power region. The tunnel diode based rectifier has an advantage of quantum tunneling effect. Therefore it can achieve higher rectification efficiencies. In this work, GI401A tunnel diode and HSMS-285B Schottky diode are used. The input power range of measurements are from −10dBm to − 40dBm. In the same topology, same material, and the same input power situation, the tunnel diode based rectifier achieves 12.6% efficiency, while the Schottky diode based rectifier achieves 6.53% efficiency.\",\"PeriodicalId\":148719,\"journal\":{\"name\":\"2019 IEEE Wireless Power Transfer Conference (WPTC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Wireless Power Transfer Conference (WPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WPTC45513.2019.9055615\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Wireless Power Transfer Conference (WPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WPTC45513.2019.9055615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region
This paper presents a comparison of tunnel diode to Schottky diode in rectifier at 2.4 GHz under −10dBm input power region. The tunnel diode based rectifier has an advantage of quantum tunneling effect. Therefore it can achieve higher rectification efficiencies. In this work, GI401A tunnel diode and HSMS-285B Schottky diode are used. The input power range of measurements are from −10dBm to − 40dBm. In the same topology, same material, and the same input power situation, the tunnel diode based rectifier achieves 12.6% efficiency, while the Schottky diode based rectifier achieves 6.53% efficiency.
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