面向内存计算的神经网络sram的BTI老化影响及缓解

Christina Dilopoulou, Y. Tsiatouhas
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引用次数: 0

摘要

静态随机存取存储器(sram)通常用于内存计算(IMC)体系结构,它直接在存储单元中执行与神经网络相关的计算,克服了传统冯-诺伊曼体系结构的数据传输限制。然而,偏置温度不稳定性(BTI)老化是纳米技术ram日益增长的可靠性问题。在本文中,我们研究了BTI老化对基于SRAM的IMC架构的影响,并提出了一种老化缓解方法来提高其可靠性和寿命。仿真结果表明,BTI老化会影响IMC单元的计算可靠性。老化减缓是通过定期交替有源与无源晶体管来实现的,反之亦然。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
BTI Aging Influence and Mitigation in Neural Networks Oriented In-Memory Computing SRAMs
Static random access memories (SRAMs) are commonly used in In-Memory Computing (IMC) architectures that perform neural network related computations directly in the memory unit, overcoming the data transfer constrains of traditional Von-Neumann architectures. However, Bias Temperature Instability (BTI) aging is a growing reliability concern for nanometer technology SRAMs. In this paper, we examine the BTI aging influence on SRAM based IMC architectures and propose an aging mitigation method to enhance their reliability and lifetime. According to our simulation results, BTI aging can affect the computation reliability of IMC cells. Aging mitigation is achieved by periodically alternating active with inactive transistors and vice-versa in these cells.
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