非均匀微结构元件在功率电磁场影响下的验证性数值计算[IC退化]

V. Starostenko, Ya.V. Grygoriev, A. V. Rukavishnikov, Y. Taran
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引用次数: 0

摘要

给出了集成电路微结构元件在电磁场作用下退化过程发展的数值计算方法。检测了导电微结构不均匀性参数对冲击电磁波电强度阈值的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Numeric computation of proofness of inhomogeneous microstructure elements at the influence of power electromagnetic field [IC degradation]
A procedure for the numerical calculation of the development of degradation processes in microstructure elements of integrated circuits by the action of electromagnetic fields is presented. The influence of conductive microstructure inhomogeneity parameters upon a threshold value of the electric intensity of an impinging electromagnetic wave is detected.
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