Improvement of Thermostability and Probable Voltage of Hally Arsenide Layers by Ion-Radiation Modification in the Design of the Resistors of Integrated Schemes

The influence of the irradiation process with helium ions of a matrix from gallium arsenide was revealed experimentally to form isolation regions and re-introduce helium ions in order to obtain electrically isolated resistors of integrated circuits of microwave devices. The empirical dependences of the resistance of epitaxial gallium arsenide on the accelerating voltage of helium ions are analyzed and the regimes of ion-beam (He+) modification of gallium arsenide are determined to create local isolating regions of resistors. The established physical and technical parameters of ion-beam modification have created the prerequisites for the development of an advanced technology for fabricating electrically isolated resistors with increased thermal stability and the necessary breakdown voltage of local insulating layers of epitaxial gallium arsenide, which in turn significantly expands the possibilities for the design of modern microcircuits.