超高速电子设备物理学

M. Shur
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引用次数: 0

摘要

先进的商业电子器件的特征尺寸现在小于电子与杂质碰撞和晶格振动的平均自由程。这完全改变了电子传递的物理性质。有效场效应迁移率与器件长度成正比,因为电子在触点中失去了漂移动量。高频阻抗受电子惯性和器件通道中相反电子通量的相位延迟的强烈影响。电子密度波(等离子体波)使器件能够很好地响应太赫兹(THz)频率范围。在高激发水平下,这些波转化为激波。等离子体波的整流和不稳定性使新一代太赫兹等离子体器件成为可能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Physics of ultrahigh speed electronic devices
Feature sizes of advanced commercial electronic devices are now smaller than the mean free path of the electron collisions with impurities and lattice vibrations. This completely changes the physics of the electron transport. The effective field effect mobility becomes proportional to the device length because the electrons lose their drift momentum in the contacts. The high frequency impedance is strongly affected by the electron inertia and by the phase delays of the opposing electron fluxes in the device channel. The waves of the electron density (plasma waves) enable the device response well into the terahertz (THz) range of frequencies. At high excitation levels, these waves are transformed into the shock waves. The rectification and instabilities of the plasma waves enable a new generation of THz plasmonic devices.
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