{"title":"谐振传感器前端自动调零逆变器","authors":"L. Marchetti, Y. Berg, M. Azadmehr","doi":"10.1109/DTIS.2017.7930154","DOIUrl":null,"url":null,"abstract":"In this paper we propose a new front-end for resonating sensors which is based on a logic inverter working as amplifier. The front-end is compact and auto-zeroing which makes it a good candidate for integration and for low power applications. It has been simulated in AMS-350nm CMOS Technology and a prototype has been fabricated using discrete components on a PCB. The circuit was tested with a BvD load implemented in discrete components, which can be proved to be a good model for a resonant sensor. The components used to implement the BvD load are: Lm = 3mH, Rb = 200Ω, Cs = 560pF, Ce = 3.3nF which leads to a resonant frequency of 140 KHz. The bandwidth of the amplifier is 380kHz and the mid-band gain is 55V/V. The prototype has been tested with a power supply of 5V.","PeriodicalId":328905,"journal":{"name":"2017 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"An autozeroing inverter based front-end for resonating sensors\",\"authors\":\"L. Marchetti, Y. Berg, M. Azadmehr\",\"doi\":\"10.1109/DTIS.2017.7930154\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we propose a new front-end for resonating sensors which is based on a logic inverter working as amplifier. The front-end is compact and auto-zeroing which makes it a good candidate for integration and for low power applications. It has been simulated in AMS-350nm CMOS Technology and a prototype has been fabricated using discrete components on a PCB. The circuit was tested with a BvD load implemented in discrete components, which can be proved to be a good model for a resonant sensor. The components used to implement the BvD load are: Lm = 3mH, Rb = 200Ω, Cs = 560pF, Ce = 3.3nF which leads to a resonant frequency of 140 KHz. The bandwidth of the amplifier is 380kHz and the mid-band gain is 55V/V. The prototype has been tested with a power supply of 5V.\",\"PeriodicalId\":328905,\"journal\":{\"name\":\"2017 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTIS.2017.7930154\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2017.7930154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An autozeroing inverter based front-end for resonating sensors
In this paper we propose a new front-end for resonating sensors which is based on a logic inverter working as amplifier. The front-end is compact and auto-zeroing which makes it a good candidate for integration and for low power applications. It has been simulated in AMS-350nm CMOS Technology and a prototype has been fabricated using discrete components on a PCB. The circuit was tested with a BvD load implemented in discrete components, which can be proved to be a good model for a resonant sensor. The components used to implement the BvD load are: Lm = 3mH, Rb = 200Ω, Cs = 560pF, Ce = 3.3nF which leads to a resonant frequency of 140 KHz. The bandwidth of the amplifier is 380kHz and the mid-band gain is 55V/V. The prototype has been tested with a power supply of 5V.