利用半导体激光器作为光源的高功率、高速Si和GaAs光开关器件

P. Stabile, A. Rosen, D. Gilbert, F. Zutavern, G. Loubriel
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引用次数: 0

摘要

高功率、高速度、光激活开关仅采用半导体器件,体积小、效率高、成本合理。它们由一个2D激光二极管阵列组成,该阵列激活具有集成光学端口的半导体开关。有几种类型的半导体开关器件是有用的。具有长载流子寿命的Si PIN二极管提供了连续波切换千瓦级射频功率的手段,而脉冲激光二极管阵列只需要几瓦的平均功率。直流偏置,Si PIN二极管也可用于控制高达一兆瓦的功率进入短ns爆发的负载。脉冲偏置砷化镓器件,利用锁定现象,用于控制高达兆瓦的功率进入短ns脉冲负载。本文将对这些类型的交换机进行概述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High Power, High Speed Si And GaAs Optical Switching Devices Utilizing Semiconductor Lasers As An Optical Source
High power, high speed, optically activated switches incorporating only semiconductor devices are small, efficient, and reasonable in cost. They consist of a 2D laser diode array activating a semiconductor switch with an integrated optical port. Several types of semiconductor switch devices are useful. Si PIN diodes with long carrier lifetime provide the means for cw switching kilo-watts of rf power with pulsed laser diode arrays which require only a few watts of average power. DC biased, Si PIN diodes are also useful in controlling up to a mega-watt of power into a load for short ns bursts. Pulsed biased GaAs devices, utilizing the phenomenon of lock-on, are used for controlling up to mega-watts of power into a load for short ns bursts. An overview of these types of switches will be described.
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