电子器件用新型菲基有机半导体材料

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI:10.1109/ASDAM.2014.6998655

M. Novota, M. Micjan, J. Nevrela, S. Flickyngerová, P. Juhasz, R. Mišicák, M. Putala, J. Jakabovic, M. Weis

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摘要

本文描述了基于有机半导体3,6-双(5 ' -己基-2,2 ' -双噻吩-5-基)菲(H2T36Phen)的薄膜制备技术和器件的表征。研究了有机薄膜的表面形貌、光学和电学性质。结果表明，溶液沉积与蒸发沉积相比，需要不同的衬底表面处理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New phenanthrene-based organic semiconductor material for electronic devices

This work describes the thin-film fabrication technology and characterization of devices based on organic semiconductor 3,6-bis(5`-hexyl-2,2`-bithiophen-5-yl)phenanthrene (H2T36Phen). The surface morphology, optical, and electrical properties are investigated for thin organic films. It demonstrates that the solution-based depositions require different substrate surface treatment than the evaporation-based deposition.

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The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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