基于p/sup +/-GaAs带隙缩小的异质面双极晶体管

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51039

M. Klausmeier-Brown, P. Dodd, M. Lundstrom, M. Melloch

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引用次数: 9

摘要

描述了一种性能可与传统异质结构双极晶体管相媲美的n-p-n双极晶体管，但制造起来要容易得多。该器件具有n-GaAs:p/sup +/-GaAs发射极-基极结，并利用p/sup +/-GaAs中的带隙收缩来保持高发射极注入效率。综述了p/sup +/-GaAs带隙收缩率的测量方法。新器件的直流性能，就电流增益而言，预计将是优秀的

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Heteroface bipolar transistor based on bandgap narrowing in p/sup +/-GaAs

A n-p-n bipolar transistor that will be comparable in performance to conventional heterostructure bipolar transistors, but will be far easier to manufacture, is described. The device features an n-GaAs:p/sup +/-GaAs emitter-base junction and makes use of bandgap shrinkage in the p/sup +/-GaAs to maintain high emitter injection efficiency. Measurements of bandgap shrinkage in p/sup +/-GaAs are reviewed. The DC performance of the new device, in terms of the current gain, is expected to be excellent.<>

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Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

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