纳米线直径随应力的变化而变化

2017 8th Annual Industrial Automation and Electromechanical Engineering Conference (IEMECON) Pub Date : 2017-08-01 DOI:10.1109/IEMECON.2017.8079628

Pratim Banerjee, Debanjali Rarhi, Debosman Dutta, R. Das, Debdatta Chowdhury, Sayan Adhikary, Ankit Anand

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引用次数: 0

摘要

对在硅衬底上垂直生长的圆柱形纳米线的应力分布进行了分析分析。根据晶格错配，TiO2纳米线的拉伸应力高达1GPa, InP纳米线的压缩应力高达900MPa。应力的角分量仍然很小，表明纳米线不会由于衬底诱导的应力而扭曲。应力的径向分量在纳米线/衬底界面处达到最大值，沿纳米线轴方向随高度的增加而逐渐减小。

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Modification of nano-wire diameter depending on stress

An analytical analysis of stress profile in cylindrical nanowires vertically grown on silicon (Si) substrate has been performed. Depending on the lattice-mismatch a tensile stress as high as 1GPa for TiO2 nanowires and a compressive stress of 900MPa for InP nanowires has been obtained. The angular component of stress remains small indicating the nanowires will not be twisted as a result of the substrate-induced stress. The radial component of stress attains a maximum at the nanowire/substrate interface and gradually decreases with increasing height along the nanowire-axis.

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2017 8th Annual Industrial Automation and Electromechanical Engineering Conference (IEMECON)

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