3.3 kV, 45 a 4H-SIC mosfet的可靠性评估

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988907

E. van Brunt, D. Lichtenwalner, R. Leonard, A. Burk, S. Sabri, B. Hull, S. Allen, J. Palmour

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引用次数: 17

摘要

在这项工作中，我们报告了3批次，每批次77个设备高温反向偏置(HTRB)测试的结果，以及与材料缺陷存在相关的3.3 kV设备栅氧化物可靠性的工作。这项工作表明，尽管3.3 kV SiC薄膜表面形貌可测量，但使用传统的4H-SIC器件加工技术和DMOS器件结构可以实现3.3 kV 4H-SIC mosfet的大规模可靠运行。在超过14 cm2的组合测试4H-SIC MOS栅极面积上测量的位错含量与MOS电容击穿场之间没有相关性。

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Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs

In this work, we report results for the 3 lot, 77 device-per-lot high temperature-reverse bias (HTRB) test, as well as work on gate oxide reliability for 3.3 kV devices in relation to the presence of material defects. The work indicates that large scale reliable operation of 3.3 kV 4H-SIC MOSFETs is achievable using conventional 4H-SiC device processing techniques and DMOS device structures, despite the prevalence of measurable surface morphology on 3.3 kV SiC epilayers. No correlation was found between dislocation content and MOS capacitor breakdown field, measured on over 14 cm2 of combined tested 4H-SIC MOS gate area.

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2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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