{"title":"一种紧凑的ab类大体积驱动的准浮栅电流反射镜,适用于低压应用","authors":"A. Suadet, V. Kasemsuwan","doi":"10.1109/ISCIT.2013.6645868","DOIUrl":null,"url":null,"abstract":"A compact class-AB bulk-driven quasi-floating gate current mirror is proposed. The circuit is based on an active class-A current mirror using bulk-driven quasi-floating gate (BD-QFG) MOS transistors and low voltage bulk-input pseudo-differential amplifier. The circuit can operate from a supply voltage as low as VT+VDSAT. The performance of the circuit is verified by SPECTRE, using a standard 0.18 μm CMOS process with a 0.5 V supply voltage. The circuit demonstrates low input impedance (934 Ω) and relatively high output impedance (1.13 MΩ). The circuit can drive the output current 8 times larger than the quiescent current. The power dissipation under quiescent condition is 8.2 μW.","PeriodicalId":356009,"journal":{"name":"2013 13th International Symposium on Communications and Information Technologies (ISCIT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A compact class-AB bulk-driven quasi-floating gate current mirror for low voltage applications\",\"authors\":\"A. Suadet, V. Kasemsuwan\",\"doi\":\"10.1109/ISCIT.2013.6645868\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A compact class-AB bulk-driven quasi-floating gate current mirror is proposed. The circuit is based on an active class-A current mirror using bulk-driven quasi-floating gate (BD-QFG) MOS transistors and low voltage bulk-input pseudo-differential amplifier. The circuit can operate from a supply voltage as low as VT+VDSAT. The performance of the circuit is verified by SPECTRE, using a standard 0.18 μm CMOS process with a 0.5 V supply voltage. The circuit demonstrates low input impedance (934 Ω) and relatively high output impedance (1.13 MΩ). The circuit can drive the output current 8 times larger than the quiescent current. The power dissipation under quiescent condition is 8.2 μW.\",\"PeriodicalId\":356009,\"journal\":{\"name\":\"2013 13th International Symposium on Communications and Information Technologies (ISCIT)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 13th International Symposium on Communications and Information Technologies (ISCIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCIT.2013.6645868\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 13th International Symposium on Communications and Information Technologies (ISCIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCIT.2013.6645868","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A compact class-AB bulk-driven quasi-floating gate current mirror for low voltage applications
A compact class-AB bulk-driven quasi-floating gate current mirror is proposed. The circuit is based on an active class-A current mirror using bulk-driven quasi-floating gate (BD-QFG) MOS transistors and low voltage bulk-input pseudo-differential amplifier. The circuit can operate from a supply voltage as low as VT+VDSAT. The performance of the circuit is verified by SPECTRE, using a standard 0.18 μm CMOS process with a 0.5 V supply voltage. The circuit demonstrates low input impedance (934 Ω) and relatively high output impedance (1.13 MΩ). The circuit can drive the output current 8 times larger than the quiescent current. The power dissipation under quiescent condition is 8.2 μW.