{"title":"基于二维蒙特卡罗器件仿真的SiGe HBTs瞬态漂移扩散和流体动力学建模精度检验","authors":"B. Neinhus, P. Graf, S. Decker, B. Meinerzhagen","doi":"10.1109/ESSDERC.1997.194397","DOIUrl":null,"url":null,"abstract":"The critical device dimensions in advanced SiGe HBTs are extremely small ( 20nm). As a consequence the validity of conventional numerical device models becomes questionable. Therefore the transient modeling accuracy of Drift-Diffusion and Hydrodynamic transport modeling is examined in this paper for an advanced SiGe HBT by means of a Monte-Carlo reference device model. The result shows that the Hydrodynamic Model should be prefered for the engineering design of advanced SiGe HBTs.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Examination of theTransient Drift-Diffusion and Hydrodynamic Modeling Accuracy for SiGe HBTs by 2D Monte-Carlo Device Simulation\",\"authors\":\"B. Neinhus, P. Graf, S. Decker, B. Meinerzhagen\",\"doi\":\"10.1109/ESSDERC.1997.194397\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The critical device dimensions in advanced SiGe HBTs are extremely small ( 20nm). As a consequence the validity of conventional numerical device models becomes questionable. Therefore the transient modeling accuracy of Drift-Diffusion and Hydrodynamic transport modeling is examined in this paper for an advanced SiGe HBT by means of a Monte-Carlo reference device model. The result shows that the Hydrodynamic Model should be prefered for the engineering design of advanced SiGe HBTs.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194397\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194397","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Examination of theTransient Drift-Diffusion and Hydrodynamic Modeling Accuracy for SiGe HBTs by 2D Monte-Carlo Device Simulation
The critical device dimensions in advanced SiGe HBTs are extremely small ( 20nm). As a consequence the validity of conventional numerical device models becomes questionable. Therefore the transient modeling accuracy of Drift-Diffusion and Hydrodynamic transport modeling is examined in this paper for an advanced SiGe HBT by means of a Monte-Carlo reference device model. The result shows that the Hydrodynamic Model should be prefered for the engineering design of advanced SiGe HBTs.